High-gain step-profiled integrated diagonal horn-antennas

Abstract

A new step-profiled integrated-horn antenna is proposed. The antenna allows gains in the range of 17-20 dB to be achieved using standard (100) silicon wafers. The antenna is diagonally fed and exhibits very good circular symmetry within the 10-dB beamwidth. It has a fundamental Gaussian coupling efficiency of 83 percent. It is demonstrated that the profiled antenna has a radiation pattern similar to that of its smooth envelope horn, provided that the discontinuity between successive wafers does not exceed 0.15 lambda. The integrated stepped-profile horn performs much better than a corresponding smooth 70 deg flare-angle integrated horn of the same aperture size. The integrated step-profile horn is very well-suited for radio-astonomical and remote-sensing millimeter-wave imaging arrays requiring a large number of focal-plane elements.