NASA NTRS · 19930000317
Vertical-Bloch-Line Memory
Abstract
Vertical-Bloch-line memory is developmental very-large-scale integrated-circuit block-access magnetic memory. Stores data in form of localized pairs of twists (VBL pairs) in magnetic field at edge of ferromagnetic domain in each stripe. Presence or absence of VBL pair at bit position denotes one or zero, respectively. Offers advantages of resistance to ionizing radiation, potential areal storage density approximately less than 1 Gb/cm squared, data rates approximately less than 1 Gb/s, and average access times of order of milliseconds. Furthermore, mass, volume, and demand for power less than other magnetic and electronic memories.
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Katti, Romney R., Wu, Jiin-Chuan, Stadler, Henry L.. 1993-06-01. Vertical-Bloch-Line Memory. https://ntrs.nasa.gov/citations/19930000317
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