NASA NTRS · 19930000541
Improved Readout For Micromagnet/Hall-Effect Memories
Abstract
Two improved readout circuits for micromagnet/Hall-effect random-access memories designed to eliminate current shunts introducing errors into outputs of older readout circuits. Incorporate additional switching transistors to isolate Hall sensors as needed.
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Wu, Jiin-Chuan, Stadler, Henry L., Katti, Romney R.. 1993-09-01. Improved Readout For Micromagnet/Hall-Effect Memories. https://ntrs.nasa.gov/citations/19930000541
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