NASA NTRS · 19930010704
Silicon device performance measurements to support temperature range enhancement
Abstract
Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.
Keep this discovery
Explore connections, maps & timelines
Bromstead, James, Weir, Bennett, Cosby, Melvin, Johnson, R. Wayne, Nelms, R. Mark, Askew, Ray. 1992-12-07. Silicon device performance measurements to support temperature range enhancement. https://ntrs.nasa.gov/citations/19930010704
Cite the original work for its findings. Save a collection to share your selection of sources.