NASA NTRS · 19930053577
A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device
Abstract
A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.
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Young, Paul G., Romanofsky, Robert R., Alterovitz, Samuel A., Mena, Rafael A., Smith, Edwyn D.. 1993-04-01. A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device. https://ntrs.nasa.gov/citations/19930053577
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