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NASA NTRS · 19930057359

Development of a hydrogen gas sensor using microfabrication technology

Abstract

Microfabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.

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BibTeXRIS

Liu, Chung-Chiun, Wu, Qinghai, Stuczynski, Matthew, Madzsar, George C.. 1992-07-01. Development of a hydrogen gas sensor using microfabrication technology. https://ntrs.nasa.gov/citations/19930057359

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