NASA NTRS · 19940000318
Improved Writing-Conductor Designs For Magnetic Memory
Abstract
Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).
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Wu, Jiin-Chuan, Stadler, Henry L., Katti, Romney R.. 1994-06-01. Improved Writing-Conductor Designs For Magnetic Memory. https://ntrs.nasa.gov/citations/19940000318
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