NASA NTRS · 19940017224
Heterojunction bipolar transistor technology for data acquisition and communication
Abstract
Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.
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Wang, C., Chang, M., Beccue, S., Nubling, R., Zampardi, P., Sheng, N., Pierson, R.. 1992-01-01. Heterojunction bipolar transistor technology for data acquisition and communication. https://ntrs.nasa.gov/citations/19940017224
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