Ampoule failure sensor time response testing: Experiments 2 and 3

Abstract

The response time of an ampoule failure sensor exposed to a liquid or vapor gallium-arsenide (GaAs) and the corresponding breach time of the containing cartridge is investigated. The experiments were conducted in niobium-hafnium (WC-103) cartridges with an exterior silicide coating. These cartridges were built to flight specifications that were used in NASA's Crystal Growth Furnace during the first United States Microgravity Laboratory (USML-1) mission. The ampoule failure sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. In these experiments a platinum metal was used for the manufacture of the sensors. This technical report discusses the response time of two different sensor designs. The first design utilizes a helical wrapped wire and the second uses a single bare wire element. Experimental results indicate that both sensors are adequate in sensing the presence of molten or vapor GaAs with the latter having a 2-minute longer response time. In both experiments, the containing cartridge was breached within 185 minutes after ampoule rupture.