NASA NTRS · 19950070306
Sinterless Formation Of Contacts On Indium Phosphide
Abstract
Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.
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Weizer, Victor G., Fatemi, Navid S.. 1995-10-01. Sinterless Formation Of Contacts On Indium Phosphide. https://ntrs.nasa.gov/citations/19950070306
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