NASA NTRS · 19960018806
Skutterudite Compounds For Power Semiconductor Devices
Abstract
New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.
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Fleurial, Jean-Pierre, Caillat, Thierry, Borshchevsky, Alexander, Vandersande, Jan. 1996-03-01. Skutterudite Compounds For Power Semiconductor Devices. https://ntrs.nasa.gov/citations/19960018806
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