NASA NTRS · 19960018808
Epitaxial Silicon Doped With Antimony
Abstract
High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.
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Huffman, James E., Halleck, Bradley L.. 1996-03-01. Epitaxial Silicon Doped With Antimony. https://ntrs.nasa.gov/citations/19960018808
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