NASA NTRS · 19960024403
PtSi/Si LWIR Detectors Made With p+ Doping Spikes
Abstract
PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.
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Lin, True-Lon, Park, Jin S., George, Thomas, Fathauer, Robert W., Jones, Eric W., Maserjian, Joseph. 1996-06-01. PtSi/Si LWIR Detectors Made With p+ Doping Spikes. https://ntrs.nasa.gov/citations/19960024403
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