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NASA NTRS · 19970031556

Quantum cascade light emitting diodes based on type-2 quantum wells

Abstract

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

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BibTeXRIS

Lin, C. H., Yang, R. Q., Zhang, D., Murry, S. J., Pei, S. S., Allerman, A. A., Kurtz, S. R.. 1997-01-21. Quantum cascade light emitting diodes based on type-2 quantum wells. https://ntrs.nasa.gov/citations/19970031556

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