NASA NTRS · 20000033711
InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells
Abstract
We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.
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Vilela, M. F., Medelci, N., Bensaoula, A., Freundlich, A., Renaud, P.. 1995-10-01. InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells. https://ntrs.nasa.gov/citations/20000033711
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