NASA NTRS · 20010006021
Statistically Reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs
Abstract
A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0. 1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level-Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.
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Asenov, Asen. 2000-01-01. Statistically Reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs. https://ntrs.nasa.gov/citations/20010006021
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