NASA NTRS · 20010006025
'Atomistic' Simulation of Decanano Devices
Abstract
When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.
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Asenov, Asen, Brown, A. R., Davies, J. H., Kaya, S., Slavcheva, G., Saini, Subhash. 2000-01-01. 'Atomistic' Simulation of Decanano Devices. https://ntrs.nasa.gov/citations/20010006025
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