NASA NTRS · 20020028806
Radiation Response of Emerging FeRAM Technology
Abstract
The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.
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Nguyen, D. N., Scheick, L. Z.. 2001-11-01. Radiation Response of Emerging FeRAM Technology. https://ntrs.nasa.gov/citations/20020028806
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