Implementation of Self-Align Local Poly Interconnection on 0.25 Micron Flash Memory

C H Lee; C H Lin; H H Chen; Y K Sheu; WenChi Ting; Gary Hong

NASA NTRS · 20020043698

Implementation of Self-Align Local Poly Interconnection on 0.25 Micron Flash Memory

C H Lee·C H Lin·H H Chen·Y K Sheu·WenChi Ting·Gary Hong

Abstract

For ETOX Flash technology. the self-aligned source module plays a critical role in minimizing cell size. For advanced Flash technology using the shallow-trench isolation (STI) scheme, however, it is difficult to form a stable source line. The Flash process in this experiment features an ETOX structure and with SIN spacer. Poly-Si (implanted poly) is used as the local interconnection material connecting the source line and was successfully implemented in the ETOX flash array in this paper.

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BibTeX RIS

C H Lee, C H Lin, H H Chen, Y K Sheu, WenChi Ting, Gary Hong. 2000-11-01. Implementation of Self-Align Local Poly Interconnection on 0.25 Micron Flash Memory. https://ntrs.nasa.gov/citations/20020043698

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