Laboratory Studies in UV and EUV Solar Physics

Abstract

The Ion Beam Experiment at the Center for Astrophysics is dedicated to the study of ion-electron collision processes of importance in solar physics. The analysis of measurements of Electron Impact Excitation (EIE) from the 3s3p(exp 3)P(exp o) metastable state to the 3s3p(exp 1)P state of Si(2+) was completed during the past year and a paper describing the results is available as a preprint. Our current program is directed at measuring absolute cross sections for dielectronic recombination (DR) and EIE in Si(3+), one of the primary ions used for probing the solar transition region. Our study of DR is particularly concerned with the effects of electric and magnetic fields on the recombination rates. Measurements of silicon ions with charge greater than n=2 have necessitated upgrading the experiment with a new ion source. The new source is also suitable for producing C(2+) beams to be used for measurements of EIE and DR for that system. The source is expected to be capable of producing beams of more highly charged systems as well.