NASA NTRS · 20020051400
Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells
Abstract
The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.
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Kolokolov, K., Li, J., Ning, C. Z., Larrabee, D. C., Tang, J., Khodaparast, G., Kono, J., Sasa, S., Inoue, M., Biegel, Bryan A.. 2002-01-01. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells. https://ntrs.nasa.gov/citations/20020051400
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