NASA NTRS · 20030112247
Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor
Abstract
We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's.
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Pinto, N. J., Johnson, A. T., MacDiarmid, A. G., Mueller, C. H., Theofylaktos, N., Robinson, D. C., Miranda, F. A.. 2003-07-03. Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor. https://ntrs.nasa.gov/citations/20030112247
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