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NASA NTRS · 20050080762

Silicon Carbide Schottky Barrier Diode

Abstract

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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BibTeXRIS

Zhao, Jian H., Sheng, Kuang, Lebron-Velilla, Ramon C.. 2004-01-01. Silicon Carbide Schottky Barrier Diode. https://ntrs.nasa.gov/citations/20050080762

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