NASA NTRS · 20050185107
1 GHz, 200 C, SiC MESFET Clapp Oscillator
Abstract
A SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent.
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Ponchak, George E., Schwartz, Zachary D.. 2005-01-01. 1 GHz, 200 C, SiC MESFET Clapp Oscillator. https://ntrs.nasa.gov/citations/20050185107
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