Response of Solid He-4 to External Stress: Interdigital Capacitor Solid Level Detector and Optical Interferometer

Abstract

Two experiments are being conducted to observe the liquid/solid interface of He-4 near 1 K. Interesting instabilities are expected to occur when the solid is non-hydrostatically stressed. (1)A compact interdigital capacitor is used as a level detector to observe solid He-4 to which stresses are applied externally. The capacitor consists of 38 interlaced 50 m wide and 3.8 mm long gold films separated by 50 m and deposited onto a 5 mm by 5 mm sapphire substrate. The capacitor is placed on one flat end wall of a cylindrical chamber (xx mm diameter and xx mm long). The solid is grown to a known height and a stress is applied by a tubular PZT along the cylindrical axis. The observed small change in height of the solid at the wall is linearly proportional to the applied stress. The solid height decreases under compressive stress but does not change under tensile stress. The response of the solid on compressive stress is consistent with the expected quadratic dependence on strain. (2)Interferometric techniques are being developed for observing the solid He-4 surface profile. A laser light source is brought into the low temperature region via single mode optical fiber. The interference pattern is transmitted back out of the low temperature apparatus via optical fiber bundle. The solid He-4 growth chamber will be equipped with two PZT's such that stress can be applied from orthogonal directions. Orthogonally applied stress is expected to induce surface instability with island-like deformation on a grid pattern. Apparatus design and progress of its construction are described.