NASA NTRS · 20060032675
High Performance MMICs with Submillimeter Wave InP-based HEMTs
Abstract
This paper presents some recently developed MMICs based on a 0.1 meu gate-length InAlAs/InGaAs/InP HEMT process with an fmax above 600 GHz.
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Weinreb, S., Pobanz, C., Matloubian, M., Radisic, V., Raghavan, G., Case, M., Micovic, M., Hu, M., Nguyen, C., Samoska, L.. 2000-05-14. High Performance MMICs with Submillimeter Wave InP-based HEMTs. https://ntrs.nasa.gov/citations/20060032675
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