GaAs based Terahertz sources for space applications: challenges and prospects

Mehdi, I.; Schlecht, E.; Chattopadhyay, G.; Martin, S.; Maestrini, A.; Maiwald, F.; Bruston, J.; Samoska, L.; Pukala, D.

Home/Archive/NASA NTRS

NASA NTRS · 20060033204

GaAs based Terahertz sources for space applications: challenges and prospects

Mehdi, I.·Schlecht, E.·Chattopadhyay, G.·Martin, S.·Maestrini, A.·Maiwald, F.·Bruston, J.·Samoska, L.·Pukala, D.

View original source ↗Export metadata ↓

Abstract

The source did not provide an abstract. Follow the original record for more information.

Explore related subjects

Schottky diodes

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Mehdi, I., Schlecht, E., Chattopadhyay, G., Martin, S., Maestrini, A., Maiwald, F., Bruston, J., Samoska, L., Pukala, D.. 2000-08-01. GaAs based Terahertz sources for space applications: challenges and prospects. https://ntrs.nasa.gov/citations/20060033204

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

NASA NTRS2010

High Power Local Oscillator Sources for 1-2 THz

Recent results from the Heterodyne Instrument for Far-Infrared (HIFI) on the Herschel Space Telescope have confirmed the usefulness of high resolution spectroscopic data for a better understanding of our Universe. This paper will explore the current status of tunable local oscillator sources beyond HIFI and provide demonstration of how power combining of GaAs Schottky diodes can be used to increase both power and upper operating frequency for heterodyne receivers. Availability of power levels greater than 1 watt in the W-band now makes it possible to design a 1900 GHz source with more than 100 microwatts of expected output power.

Schottky diodes↗

NASA NTRS2006

A 260-340 GHz Dual Chip Frequency Tripler for THz Frequency Multiplier Chains

We designed and fabricated a fix-tuned balanced frequency tripler working in the 260-340 GHz band to be the first stage of a x3x3x3 multiplier chain to 2.7 THz. The design of a dual-chip version of this multiplier featuring an input splitter / output combiner as part of the input / output matching networks of both chips - with no degradation of the expected bandwidth and efficiency- will be presented.

Schottky diodes↗

NASA NTRS2005

Multi-Anode Frequency Triplers at Sub-Millimeter Wavelengths

We report on the design methodology of fix-tuned split-block waveguide balanced frequency triplers working at 300,600 and 900 GHz. They feature four to six GaAs Schottky planar diodes in a balanced configuration. A 6-anode 300 GHz tripler, a 6-anode 560 GHz tripler and a 4-anode 900 GHz tripler will be fabricated with JPL membrane technology in order to minimize dielectric loading and ensure accurate thickness of the substrate. A 4-anode 600 GHz tripler was fabricated with JPL substrateless technology that delivers 0.8-1.6mW in the 540-640 GHz band at room temperature. When cooled to l2OK this tripler delivers 2-4mW from 540 to 640 GHz.

Schottky diodes↗