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NASA NTRS · 20060035405

Total Ionizing Dose Effects on 64Mb 3.3V DRAMs

Abstract

64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.

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BibTeXRIS

Johnston, A. H., Lee, C. I.. 1997-07-21. Total Ionizing Dose Effects on 64Mb 3.3V DRAMs. https://ntrs.nasa.gov/citations/20060035405

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