NASA NTRS · 20060036116
Improvements in GaAs JFETs for Deep Cryogenic Operation
Abstract
Gallium arsenide junction field-effect transistors (GaAs JFETs) can be made immune to carrier freeze-out, making such transistors useful for the readout of detectorr arrays that operate at 4K.
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Cunningham, Thomas J.. 1996-06-26. Improvements in GaAs JFETs for Deep Cryogenic Operation. https://ntrs.nasa.gov/citations/20060036116
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