NASA NTRS · 20060036489
GaAs Infrared Detectors
Abstract
It is customary to make infrared (IR) detectors in the long wavelength range (8-20 (micro)m) by utilizing the interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit.
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Gunapala, S. D., Bandara, S. V.. 1996-01-01. GaAs Infrared Detectors. https://ntrs.nasa.gov/citations/20060036489
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