NASA NTRS · 20060042411
Self-assembled III-V quantum dots: potential for silicon optoelectronics
Abstract
The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Leon, R.. 2001-09-01. Self-assembled III-V quantum dots: potential for silicon optoelectronics. https://ntrs.nasa.gov/citations/20060042411
Cite the original work for its findings. Save a collection to share your selection of sources.