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NASA NTRS · 20060043232

Design and operational considerations for robust planar GaAs varactors: a reliability study

Maiwald, Frank·Schlecht, Erich·Ward, John·Lin, Robert·Leon, Rosa·Pearson, John·Mehdi, Imran
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Abstract

This paper will describe on-going investigations into the effects of excessive reverse currents in Schottky diodes along with presenting a methodology for determining safe bias conditions for a given multiplier.

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Maiwald, Frank, Schlecht, Erich, Ward, John, Lin, Robert, Leon, Rosa, Pearson, John, Mehdi, Imran. 2003-04-01. Design and operational considerations for robust planar GaAs varactors: a reliability study. https://ntrs.nasa.gov/citations/20060043232

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NASA NTRS2003

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

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