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NASA NTRS · 20060043277

Development of GaN-based micro chemical sensor nodes

Son, Kyung-ah·Prokopuk, Nicholas·George, Thomas·Moon, Jeong S.
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Abstract

Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

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Son, Kyung-ah, Prokopuk, Nicholas, George, Thomas, Moon, Jeong S.. 2005-09-01. Development of GaN-based micro chemical sensor nodes. https://ntrs.nasa.gov/citations/20060043277

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