Search NASA⌕ Search

NASA NTRS · 20070023697

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

Abstract

This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency. Results are presented for SOI processors with feature sizes of 0.18 microns and two different core voltages. Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Irom, Frokh, Farmanesh, Farhad F., Swift, Gary M., Johnston, Allen H.. 2004-07-19. Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors. https://ntrs.nasa.gov/citations/20070023697

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

single-event upset (SEU)↗