NASA NTRS · 20080004814
Quasi four-level Tm:LuAG laser
Abstract
A quasi four-level solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG-based host material doped to a final concentration between about 2% and about 7% thulium (Tm) ions. For the more heavily doped final concentrations, the LuAG-based host material is a LuAG seed crystal doped with a small concentration of Tm ions. Laser diode arrays are disposed transversely to the laser crystal for energizing the Tm ions.
Keep this discovery
Explore connections, maps & timelines
Jani, Mahendra G., Barnes, Norman P., Hutcheson, Ralph L., Rodriguez, Waldo J.. 1997-06-17. Quasi four-level Tm:LuAG laser. https://ntrs.nasa.gov/citations/20080004814
Cite the original work for its findings. Save a collection to share your selection of sources.