NASA NTRS · 20080006901
Heterojunction semiconductor device
Abstract
A layer of germanium on a body of P type conductivity single crystal indium phosphide provides a blocking heterojunction. This device will emit light when a suitable voltage is placed thereacross or the device can be used as a photoconductor to generate electrons when light is directed thereon.
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Harwylo, Frank Z.. 1979-06-19. Heterojunction semiconductor device. https://ntrs.nasa.gov/citations/20080006901
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