Monolithic transistor gate energy recovery system

Abstract

Energy is recovered from an insulated gate semiconductor switch, such as a MOSFET, that is otherwise lost in the gate capacitance by producing a notch in the gate control voltage for an interval B following an interval A after initial application of a gate control voltage pulse for turning the switch on, and a notch for an interval C following termination of the gate control voltage pulse followed by interval D during which the switch is turned on again, where each interval is a period .DELTA.T given by ##EQU1## L.sub.s is the inductance (discrete and/or parasitic) in series with the gate electrode of the insulated gate semiconductor switch, and C.sub.in is the capacitance of that switch between its gate and source electrodes. The interval .DELTA.T may be provided directly by timing in a pulse forming circuit for the gate control voltage applied, or adaptively by sensing the gate voltage v.sub.g and comparing it with fixed progressively higher voltages v.sub.1, v.sub.2 and v.sub.3, where v.sub.2 is intermediate v.sub.1 and v.sub.3 which correspond to the lower and upper levels of v.sub.g as the switch is turned off and on.