NASA NTRS ยท 20080012266
One-third selection scheme for addressing a ferroelectric matrix arrangement
Abstract
An improved scheme for selectively addressing a matrix arrangement comprised of ferroelectrics having x and y orthogonally disposed intersecting lines. A one-third selection scheme is utilized that includes normalized selection signals having amplitudes: V.sub.x =0; V.sub.x =2/3; V.sub.y =1/3; and V.sub.y =1, which signals can be applied to the intersection of an x and y-line. The instant selection scheme minimizes both hysteresis creep and the cross-coupling voltage between x and y-lines to prevent undesirable hysteresis switching of the ferroelectric matrix arrangement.
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Tannas, Jr., Lawrence E.. 1979-09-25. One-third selection scheme for addressing a ferroelectric matrix arrangement. https://ntrs.nasa.gov/citations/20080012266
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