Interface Shape Control using Localized Heating during Bridgman Growth

Abstract

Numerical calculations were performed to assess the effect of localized radial heating on the melt-crystal interface shape during vertical Bridgman growth. System parameters examined include the ampoule, melt and crystal thermal conductivities, the magnitude and width of localized heating, and the latent heat of crystallization. Concave interface shapes, typical of semiconductor systems, could be flattened or made convex with localized heating. Although localized heating caused shallower thermal gradients ahead of the interface, the magnitude of the localized heating required for convexity was less than that which resulted in a thermal inversion ahead ofthe interface. A convex interface shape was most readily achieved with ampoules of lower thermal conductivity. The conditions under which convection in the melt must be considered were determined.