T-Shaped Emitter Metal Structures for HBTs

Abstract

Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.