NASA NTRS · 20100036559
Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode
Abstract
This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.
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Miranda, Felix A., Meador, Michael A., Theofylaktos, Onoufrios, Pinto, Nicholas J., Mueller, Carl H., Santos-Perez, Javier. 2010-10-01. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode. https://ntrs.nasa.gov/citations/20100036559
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