NASA NTRS · 20100042206
338-GHz Semiconductor Amplifier Module
Abstract
Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.
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Samoska, Lorene A., Gaier, Todd C., Soria, Mary M., Fung, King Man, Rasisic, Vesna, Deal, William, Leong, Kevin, Mei, Xiao Bing, Yoshida, Wayne, Liu, Po-Hsin, Uyeda, Jansen, Lai, Richard. 2010-12-01. 338-GHz Semiconductor Amplifier Module. https://ntrs.nasa.gov/citations/20100042206
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