NASA NTRS · 20120018096
Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths
Abstract
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.
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Chattopadhyay, Goutam, Reck, Theodore and, Schlecht, Erich, Lin, Robert, Deal, William. 2012-09-23. Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths. https://ntrs.nasa.gov/citations/20120018096
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