Search NASAโŒ• Search

NASA NTRS ยท 20140000668

MRAM Technology Status

Abstract

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Heidecker, Jason. 2013-01-02. MRAM Technology Status. https://ntrs.nasa.gov/citations/20140000668

Cite the original work for its findings. Save a collection to share your selection of sources.