NASA NTRS · 20150007192
Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device
Abstract
A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.
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Miranda, Felix A., Theofylaktos, Onoufrios, Pinto, Nicholas J., Mueller, Carl H., Santos, Javier, Meador, Michael A.. 2015-04-28. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device. https://ntrs.nasa.gov/citations/20150007192
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