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NASA NTRS · 20150007847

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

Abstract

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

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Johnston, A. H., Swimm, R. T., Thorbourn, D. O.. 2013-07-08. Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits. https://ntrs.nasa.gov/citations/20150007847

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