NASA NTRS · 20160000792
Recent Radiation Test Results for Power MOSFETs
Abstract
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
Keep this discovery
Explore connections, maps & timelines
Lauenstein, Jean-Marie, Topper, Alyson D., Casey, Megan C., Wilcox, Edward P., Phan, Anthony M., Kim, Hak S., LaBel, Kenneth A.. 2013-07-11. Recent Radiation Test Results for Power MOSFETs. https://ntrs.nasa.gov/citations/20160000792
Cite the original work for its findings. Save a collection to share your selection of sources.