NASA NTRS · 20160006709
AlMn Transition Edge Sensors for Advanced ACTPol
Abstract
Advanced ACTPol (Adv ACT) will use an array of multichroic polarization sensitive AIMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.
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Li, Dale, Austermann, Jason E., Beall, James A., Tucker, Daniel T., Duff, Shannon M., Gallardo, Patricio A., Henderson, Shawn W., Hilton, Gene C., Ho, Shuay-Pwu, Hubmayr, Johannes, Koopman, Brian J., McMahon, Jeffrey J., Nati, Federico, Niemack, Michael D., Pappas, Christine G., Salatino, Maria, Schmitt, Benjamin L., Simon, Sara M., Staggs, Suzanne T., Van Lanen, Jeff, Ward, Jonathan T., Wollack, Edward J.. 2016-02-17. AlMn Transition Edge Sensors for Advanced ACTPol. https://ntrs.nasa.gov/citations/20160006709
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