NASA NTRS · 20160012002
Dopant Selective Reactive Ion Etching of Silicon Carbide
Abstract
A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.
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Okojie, Robert. 2016-09-27. Dopant Selective Reactive Ion Etching of Silicon Carbide. https://ntrs.nasa.gov/citations/20160012002
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