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NASA NTRS ยท 20180003635

Fabricating Ultra-Thin Silicon Carbide Diaphragms

Abstract

A process for fabricating relatively thin SiC diaphragms may include fast Reactive Ion Etching (RIE) followed by Dopant Selective Reactive Ion Etching (DSRIE). The process may produce silicon carbide (SiC) diaphragms thinner than 10 microns. These thinner, more sensitive diaphragms may then be used to effectively resolve sub-psi pressures in jet engines, for example.

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BibTeXRIS

Okojie, Robert S.. 2018-05-22. Fabricating Ultra-Thin Silicon Carbide Diaphragms. https://ntrs.nasa.gov/citations/20180003635

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